PART |
Description |
Maker |
STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package 65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
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ST Microelectronics STMICROELECTRONICS
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SUM55P06-19L SUM55P06-19L-E3 |
55 A, 60 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB TO-263, 3 PIN 55 A, 60 V, 0.019 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB ROHS COMPLIANT, TO-263, 3 PIN
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Vishay Intertechnology, Inc.
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HUF75332S3S HUF75332P3 HUF75332G3 FN4489 |
60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs From old datasheet system
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INTERSIL[Intersil Corporation]
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STP60NF10 |
N-CHANNEL 100V - 0.019 ohm - 80A TO-220 STripFET II POWER MOSFET
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ST Microelectronics
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SIF912EDZ-T1-GE3 |
7.4 A, 30 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5 X 2 MM, ROHS COMPLIANT, POWERPAK-6
|
Vishay Intertechnology, Inc. VISHAY SILICONIX
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APT10M19SVR |
POWER MOS V 100V 75A 0.019 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
|
APT20M19JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 112A 0.019 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
NP34N055IHE NP34N055HHE NP34N055HHE-AZ |
Nch MOS FET for High-speed switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 34 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
NEC[NEC] Cypress Semiconductor, Corp.
|
ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 8A条一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
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LOB1-R0523FI LOB1-R0221FI LOB1-R022JI LOB1-R00562F |
RESISTOR, 1 W, 1 %, 0.0523 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0221 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.022 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00562 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00604 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.0062 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0147 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00523 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0232 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0332 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00576 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0059 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00649 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.0051 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00698 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.0068 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00511 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0422 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.047 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0237 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0133 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0226 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00665 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0357 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00549 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 5 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00634 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00619 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.0475 ohm, THROUGH HOLE MOUNT AXIAL LEADED RESISTOR, 1 W, 1 %, 0.00681 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Welwyn Components, Ltd.
|
MS235RAA19NGSN |
1 ELEMENT, 0.019 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
COILCRAFT INC
|
FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
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Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
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